Let's go inside an Intel 4004 microprocessor to see an individual transistor
To make this transistor, first oxide then nitride layers are grown
A shadow mask then exposes a photographic emulsion
Exposed nitride is then etched away
Oxygen reacts with the Si to grow more oxide
By heating in silane, polycrystal Si is then grown
A stripe is exposed in a second photographic emulsion
Exposed polycrystal Si is etched away leaving the transistor gate
Phosphorus ions then penetrate thin oxide to create the source and drain
Heating in oxygen grows an insulating coat on the gate
A third photographic emulsion defines windows above the source and drain
Openings are then etched in the exposed oxide
Metal is sprayed on to the surface
A fourth photographic emulsion is patterned
Unwanted metal is etched away completing the transistor
And finally, here is the circuit symbol for the transistor
This podcast is drawn from the Virtual Lab presentations of WeCanFigureThisOut.org. The copyrighted material of this site was developed under funding from National Science Foundation CCLI, NIRT, MRSEC and NUE programs. This project is led by John C. Be
All of the scenes together
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